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| SFL3200/39 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET Features: * * * * * * * * * Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available Logic Level 12A 150V .17 N-Channel Power MOSFET TO-39 Symbol Value Unit Maximum Ratings Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Peak Drain Current TC = 25 C 1/ VDS VGS ID IP Top & Tstg RJC PD 150 +16 9.3 35 -55 to 175 11.5 13 1.2 Volts Volts Amps Amps C C/W Watts Operating and Storage Temperature Thermal Resistance Junction to Case Total Device Dissipation @ TC = 25 C Total Device Dissipation @ TA = 25 C Package Outline: TO-39 (JEDEC) PIN OUT: PIN 1: Source PIN 2: Gate Pin 3: Drain Note: 1/ Peak Drain Current Limited by Package Lead Wire NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0007A Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFL3200/39 Electrical Characteristics @ TJ = 25C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 ) Drain to Source On State Resistance (VGS=10 V, ID=5 A) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=5V) Gate Threshold Voltage (VDS=VGS, ID=250) Forward Transconductance (VDS>ID(on) x Max, IDS=5A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time At rated VGS VGS=10 Volts 80% rated VDS ID=9A VDD=50% Rated VDS RG=15 ID=7.2A Symbol BVDSS RDS(on) ID(on) VGS(th) gfs IDSS Min 150 -- 12 1 8.35 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- .16 -- -- 6 -- -- -- -- -- -- -- 2.4 45 38 36 -- 160 8.1 775 140 70 Max -- .17 -- 2 -- 25 250 100 -100 35 4.1 21 -- -- -- -- 1.33 240 -- -- -- -- Units Volts A V mho A IGSS Qg Qgs Qgd td(on) nA nC tr tf td(off) nsec V nsec nC pF Diode Forward Voltage (VGS=0 V, TJ=25C) IS=7.2A Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=150C IF=7.2A Di/dt=100A/sec VGS=0 Volts VDS=25 Volts F=1 MHz VSD T rr QRR Ciss Coss Crss |
Price & Availability of SFL320039
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